Халькогенідні напівпровідники для інформаційних систем
DOI:
https://doi.org/10.35681/1560-9189.2026.28.1.358449Ключові слова:
халькогенідні напівпровідники, фазові переходи, абляція, фотоіндукований мастранспорт, реконфігуровані дифракційні елементиАнотація
Наведено результати досліджень, отриманих спільно співробітниками Інститутів проблем реєстрації інформації, фізики напівпровідників ім. В.Є. Лашкарьова, електронної фізики НАН України, Ужгородського національного університету та Ужгородського центру матеріалів Інституту проблем реєстрації інформації зі створення елементної бази інформаційних систем на основі використання склоподібних халькогенідних напівпровідників і нових електрооптичних та акустооптичних
кристалів для систем керування лазерним випромінюванням. Визначено напрямки подальшого використання отриманих результатів.
Посилання
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